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H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
May 2007
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Features
High BVCEO
tm
General Description
The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
- Minimum 100V for H11G1M - Minimum 80V for H11G2M - Minimum 55V for H11G3M High sensitivity to low input current (Min. 500% CTR at IF = 1mA) Low leakage current at elevated temperature (Max. 100A at 80C) Underwriters Laboratory (UL) recognized File # E90700, Volume 2
Applications
CMOS logic interface Telephone ring detector Low input TTL interface Power supply isolation Replace pulse transformer
Schematic
ANODE 1
6 BASE
CATHODE 2
5 COLLECTOR
N/C 3
4 EMITTER
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only.
Symbol
TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF VR IF(pk) PD DETECTOR VCEO Forward Input Current Reverse Input Voltage Storage Temperature Operating Temperature
Parameter
Value
-55 to +150 -40 to +100 260 for 10 sec 260 3.5 60 6.0 3.0 100 1.8
Units
C C C mW mW/C mA V A mW mW/C
Lead Solder Temperature (Wave Solder) Total Device Power Dissipation @ TA = 25C Derate Above 25C
Forward Current - Peak (1s pulse, 300pps) LED Power Dissipation @ TA = 25C Derate Above 25C Collector-Emitter Voltage H11G1M H11G2M H11G3M
100 80 55 200 2.67
V
PD
LED Power Dissipation @ TA = 25C Derate Above 25C
mW mW/C
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com 2
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Electrical Characteristics (TA = 25C unless otherwise specified.)
Individual Component Characteristics Symbol
EMITTER VF VF TA BVR CJ IR Forward Voltage Forward Voltage Temp. Coefficient Reverse Breakdown Voltage Junction Capacitance Reverse Leakage Current Breakdown Voltage Collector to Emitter IR = 10A VF = 0V, f = 1MHz VF = 1V, f = 1MHz VR = 3.0V All IF = 10mA All All All All 3.0 1.3 -1.8 25 50 65 0.001 10 A 1.50 V mV/C V pF
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
DETECTOR BVCEO IC = 1.0mA, IF = 0 H11G1M H11G2M H11G3M BVCBO Collector to Base IC = 100A H11G1M H11G2M H11G3M BVEBO ICEO Emitter to Base Leakage Current Collector to Emitter VCE = 80V, IF = 0 VCE = 60V, IF = 0 VCE = 30V, IF = 0 VCE = 80V, IF = 0, TA = 80C VCE = 60V, IF = 0, TA = 80C All H11G1M H11G2M H11G3M H11G1M H11G2M 100 A 100 80 55 100 80 55 7 10 100 V nA V V
Transfer Characteristics Symbol
EMITTER CTR Current Transfer Ratio, Collector to Emitter Saturation Voltage IF = 10mA, VCE = 1V IF = 1mA, VCE = 5V IF = 16mA, IC = 50mA IF = 1mA, IC = 1mA IF = 20mA, IC = 50mA SWITCHING TIMES H11G1M/2M H11G1M/2M H11G3M H11G1M/2M H11G1M/2M H11G3M All All 100 (1000) 5 (500) mA (%)
Characteristics
Test Conditions
Device
Min.
Typ.*
Max.
Units
2 (200)
0.85 0.75 0.85 5 100 1.0 1.0 1.2 V
VCE(SAT)
tON tOFF
Turn-on Time Turn-off Time
RL = 100, IF = 10mA, VCE = 5V, f 30Hz, Pulse Width 300s
s s
Isolation Characteristics Symbol
VISO RISO CISO
Characteristic
Isolation Voltage Isolation Resistance Isolation Capacitance
Test Conditions
f = 60Hz, t = 1 sec. VI-O = 500 VDC f = 1MHz
Device
All All All
Min.
7500 1011
Typ.*
Max.
Units
VACPEAK
0.2
pF
*All Typical values at TA = 25C
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0 www.fairchildsemi.com 3
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Typical Performance Curves
10 100
IC - NORMALIZED OUTPUT CURRENT
IC - NORMALIZED OUTPUT CURRENT
1 Normalized to: VCE = 5V IF = 1mA
10
IF = 50mA IF = 5mA IF = 1mA IF = 0.5mA
Normalized to: VCE = 5V IF = 1mA TA = 25C
0.1
1
0.01
0.1
0.001 0.1
1
10
0.01 -60
-40
-20
0
20
40
60
80
100
120
IF - LED INPUT CURRENT(mA)
TA - AMBIENT TEMPERATURE (C)
Fig. 1 Output Current vs. Input Current
Fig. 2 Normalized Output Current vs. Temperature
100
1000 Normalized to: VCE = 5 V IF = 1 mA TA = 25C
IC - NORMALIZED OUTPUT CURRENT
ICEO - DARK CURRENT (nA)
IF = 50mA IF = 10mA IF = 2mA
100
VCE = 80V
10
10
VCE = 30V
1
IF = 1mA IF = 0.5mA
VCE = 10V 1
0.1
0.1
0.01 1 10
0.01 0 10 20 30 40 50 60 70 80 90 100
VCE - COLLECTOR - EMITTER VOLTAGE (V)
TA - AMBIENT TEMPERATURE (C)
Fig. 3 Output Current vs. Collector - Emitter Voltage
Fig. 4 Collector-Emitter Dark Current vs. Ambient Temperature
10
IF - FORWARD CURRENT (mA)
RL = 10
RL = 100
RL = 1k
1
Normalized to: VCC = 5 V IF = 10 mA RL = 100 0.1 0.1
1
10
ton + toff - TOTAL SWITCHING SPEED (NORMALIZED)
Fig. 5 Input Current vs. Total Switching Speed (Typical Values)
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com 4
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Package Dimensions
Through Hole
0.350 (8.89) 0.320 (8.13)
Surface Mount
0.350 (8.89) 0.320 (8.13)
0.260 (6.60) 0.240 (6.10)
0.260 (6.60) 0.240 (6.10)
0.390 (9.90) 0.332 (8.43)
0.070 (1.77) 0.040 (1.02)
0.070 (1.77) 0.040 (1.02)
0.014 (0.36) 0.010 (0.25) 0.320 (8.13)
0.320 (8.13) 0.014 (0.36) 0.010 (0.25)
0.200 (5.08) 0.115 (2.93)
0.200 (5.08) 0.115 (2.93)
0.012 (0.30) 0.008 (0.20)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 (2.54) 15 0.012 (0.30)
0.025 (0.63) 0.020 (0.51) 0.020 (0.50) 0.016 (0.41)
0.100 [2.54] 0.035 (0.88) 0.006 (0.16)
0.4" Lead Spacing
Recommended Pad Layout for Surface Mount Leadform
0.070 (1.78)
0.350 (8.89) 0.320 (8.13)
0.260 (6.60) 0.240 (6.10)
0.060 (1.52)
0.425 (10.79)
0.070 (1.77) 0.040 (1.02) 0.014 (0.36) 0.010 (0.25)
0.100 (2.54) 0.305 (7.75) 0.030 (0.76)
0.200 (5.08) 0.115 (2.93)
0.100 (2.54) 0.015 (0.38) 0.020 (0.50) 0.016 (0.41) 0.100 [2.54] 0.012 (0.30) 0.008 (0.21) 0.425 (10.80) 0.400 (10.16)
Note: All dimensions are in inches (millimeters).
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com 5
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Ordering Information
Option
No option S SR2 T V TV SV SR2V
Order Entry Identifier (Example)
H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G1TVM H11G1SVM H11G1SR2VM
Description
Standard Through Hole Device Surface Mount Lead Bend Surface Mount; Tape and Reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
H11G1 V
3 4
2 6
X YY Q
5
Definitions
1 2 3 4 5 6 Fairchild logo Device number VDE mark (Note: Only appears on parts ordered with VDE option - See order entry table) One digit year code, e.g., `7' Two digit work week ranging from `01' to `53' Assembly package code
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com 6
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
Carrier Tape Specifications
12.0 0.1 4.5 0.20 2.0 0.05 0.30 0.05 4.0 0.1 O1.5 MIN 1.75 0.10
11.5 1.0 21.0 0.1 9.1 0.20 24.0 0.3
0.1 MAX
10.1 0.20
O1.5 0.1/-0
User Direction of Feed
Reflow Profile
300 280 260 240 220 200 180 160 C 140 120 100 80 60 40 20 0 0 260C >245C = 42 Sec
Time above 183C = 90 Sec 1.822C/Sec Ramp up rate
33 Sec 60 120 180 270 360
Time (s)
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com 7
H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers
TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM 2 E CMOSTM (R) EcoSPARK EnSignaTM FACT Quiet SeriesTM (R) FACT (R) FAST FASTrTM FPSTM (R) FRFET GlobalOptoisolatorTM GTOTM HiSeCTM
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DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Preliminary Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor. The datasheet is printed for reference information only.
Rev. I26
2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2007 Fairchild Semiconductor Corporation H11GXM Rev. 1.0.0
www.fairchildsemi.com 8

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